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Complete SiC

Crystal growth solutions from powder to wafer

Hotzone and process design, the consumables that go into the chamber, the furnace systems that run them, and the wafer processing at the end. Every part is developed against the others, in our own facility in Linköping.

One supplier, one feedback loop

Everything a SiC crystal needs

Most suppliers sell one link in this chain. We supply all of them, which means what we measure on the finished substrate goes straight back into the next hotzone design.

01

Development & Innovation

Process and hotzone design, modelling and simulation, iterated until the thermal field fits the process.

02

Crystal Growth Consumables

Seed crystals, source powder and custom graphite hardware, specified for the hotzone they sit in.

03 - The enabler

Xforge PVT

The furnace that turns the design and the materials into a crystal.

04

SiC Substrates

Boules up to 200 mm sliced, polished and characterised in our own pilot lab.

Where the quality is decided

Consumables, designed for your process

Seed crystals, source powder and graphite hardware made for the hotzone they will sit in. Because we design the hotzone and build the furnace as well, the parts are specified against each other rather than bought separately and hoped to fit.

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The enabler

Xforge turns the design into a crystal

A compact, CE-marked vacuum induction furnace for physical vapor transport, with the hotzone and coil designed per customer. Stackable and clusterable, field-proven at customer sites over several years, and used daily in our own growth programme.

Field proven, not brochure proven

Selected for volume production

Xforge HT applies the same furnace architecture to sintering, stress relief of additively manufactured components, diffusion coating and diffusion bonding of refractory metals and ceramics.

Beyond crystal growth

One platform, many high-temperature processes

Xforge HT applies the same furnace architecture to sintering, stress relief of additively manufactured components, diffusion coating and diffusion bonding of refractory metals and ceramics.

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Equipment, materials and expertise

Everything under one roof

Alongside the furnace platform we supply SiC seed crystals, source powder and graphite, and engineering services covering high-vacuum and high-temperature systems, gas systems, mechatronics and industrial vision. Short lead times follow from keeping it in one place.

European technological sovereignty

Building Europe's first commercial supply of semi-insulating SiC

Unlike the electrically conductive n-type SiC used in automotive power electronics, semi-insulating SiC is a high-resistivity substrate required for GaN HEMT transistors, RF amplifiers, satellite communication, radar, electronic warfare and advanced sensors. It has also been identified as critical for next-generation AI chips, AI data centers and AR glasses. Europe currently has no domestic commercial capability to produce it.

Achieved

High-resistivity properties demonstrated in SI-SiC wafers

Achieved

Partner grew GaN epitaxial layers on TEKSiC wafers

In progress

Chalmers processing epiwafers into RF and power HEMT structures

Markets

Representatives worldwide

TEKSiC is seeking resellers globally. Enquiries to sales@teksic.com